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hekate/bdk/mem/sdram.h
CTCaer 83c95d8a3b bdk: sdram: update 20/21/22 ids for new dram
Dram chip is Samsung 4GB built on 1z-nm that allows for 40% lower power usage.
2022-03-23 02:20:55 +02:00

127 lines
5.2 KiB
C

/*
* Copyright (c) 2018 naehrwert
* Copyright (c) 2020-2021 CTCaer
*
* This program is free software; you can redistribute it and/or modify it
* under the terms and conditions of the GNU General Public License,
* version 2, as published by the Free Software Foundation.
*
* This program is distributed in the hope it will be useful, but WITHOUT
* ANY WARRANTY; without even the implied warranty of MERCHANTABILITY or
* FITNESS FOR A PARTICULAR PURPOSE. See the GNU General Public License for
* more details.
*
* You should have received a copy of the GNU General Public License
* along with this program. If not, see <http://www.gnu.org/licenses/>.
*/
#ifndef _SDRAM_H_
#define _SDRAM_H_
#include <mem/emc.h>
/*
* Tegra X1/X1+ EMC/DRAM Bandwidth Chart:
*
* Note: BWbits T210 = Hz x ddr x bus width x channels = Hz x 2 x 32 x 2.
* BWbits T210B01 = Hz x ddr x bus width x channels = Hz x 2 x 64 x 2.
* Both assume that both sub-partitions are used and thus reaching max
* bandwidth per channel. (T210: 2x16-bit, T210B01: 2x32-bit).
* Retail Mariko use one sub-partition, in order to meet Erista perf.
*
* T210 T210B01
* 40.8 MHz: 0.61 1.22 GiB/s
* 68.0 MHz: 1.01 2.02 GiB/s
* 102.0 MHz: 1.52 3.04 GiB/s
* 204.0 MHz: 3.04 6.08 GiB/s <-- Tegra X1/X1+ Init/SC7 Frequency
* 408.0 MHz: 6.08 12.16 GiB/s
* 665.6 MHz: 9.92 19.84 GiB/s
* 800.0 MHz: 11.92 23.84 GiB/s <-- Tegra X1/X1+ Nvidia OS Boot Frequency
* 1065.6 MHz: 15.89 31.78 GiB/s
* 1331.2 MHz: 19.84 39.68 GiB/s
* 1600.0 MHz: 23.84 47.68 GiB/s <-- Tegra X1/X1+ HOS Max Frequency
* 1862.4 MHz: 27.75 55.50 GiB/s <-- Tegra X1 Official Max Frequency
* 2131.2 MHz: 31.76 63.52 GiB/s <-- Tegra X1+ Official Max Frequency
*
*/
enum sdram_ids_erista
{
// LPDDR4 3200Mbps.
LPDDR4_ICOSA_4GB_SAMSUNG_K4F6E304HB_MGCH = 0,
LPDDR4_ICOSA_4GB_HYNIX_H9HCNNNBPUMLHR_NLE = 1,
LPDDR4_ICOSA_4GB_MICRON_MT53B512M32D2NP_062_WT = 2, // WT:C.
LPDDR4_COPPER_4GB_SAMSUNG_K4F6E304HB_MGCH = 3, // Changed to Iowa Hynix 4GB 1Y-A.
LPDDR4_ICOSA_6GB_SAMSUNG_K4FHE3D4HM_MGCH = 4,
LPDDR4_COPPER_4GB_HYNIX_H9HCNNNBPUMLHR_NLE = 5, // Changed to Hoag Hynix 4GB 1Y-A.
LPDDR4_COPPER_4GB_MICRON_MT53B512M32D2NP_062_WT = 6, // Changed to Aula Hynix 4GB 1Y-A.
};
enum sdram_ids_mariko
{
// LPDDR4X 4266Mbps.
LPDDR4X_IOWA_4GB_HYNIX_1Y_A = 3, // Replaced from Copper.
LPDDR4X_HOAG_4GB_HYNIX_1Y_A = 5, // Replaced from Copper.
LPDDR4X_AULA_4GB_HYNIX_1Y_A = 6, // Replaced from Copper.
// LPDDR4X 3733Mbps.
LPDDR4X_IOWA_4GB_SAMSUNG_X1X2 = 7,
LPDDR4X_IOWA_4GB_SAMSUNG_K4U6E3S4AM_MGCJ = 8, // Die-M.
LPDDR4X_IOWA_8GB_SAMSUNG_K4UBE3D4AM_MGCJ = 9, // Die-M.
LPDDR4X_IOWA_4GB_HYNIX_H9HCNNNBKMMLHR_NME = 10, // Die-M.
LPDDR4X_IOWA_4GB_MICRON_MT53E512M32D2NP_046_WTE = 11, // 4266Mbps. Die-E.
LPDDR4X_HOAG_4GB_SAMSUNG_K4U6E3S4AM_MGCJ = 12, // Die-M.
LPDDR4X_HOAG_8GB_SAMSUNG_K4UBE3D4AM_MGCJ = 13, // Die-M.
LPDDR4X_HOAG_4GB_HYNIX_H9HCNNNBKMMLHR_NME = 14, // Die-M.
LPDDR4X_HOAG_4GB_MICRON_MT53E512M32D2NP_046_WTE = 15, // 4266Mbps. Die-E.
// LPDDR4X 4266Mbps.
LPDDR4X_IOWA_4GB_SAMSUNG_Y = 16,
LPDDR4X_IOWA_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 17, // Die-A.
LPDDR4X_IOWA_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 18, // Die-A.
LPDDR4X_HOAG_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 19, // Die-A.
LPDDR4X_IOWA_4GB_SAMSUNG_1Z = 20, // 1z nm. 40% lower power usage.
LPDDR4X_HOAG_4GB_SAMSUNG_1Z = 21, // 1z nm. 40% lower power usage.
LPDDR4X_AULA_4GB_SAMSUNG_1Z = 22, // 1z nm. 40% lower power usage.
LPDDR4X_HOAG_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 23, // Die-A.
LPDDR4X_AULA_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 24, // Die-A.
LPDDR4X_IOWA_4GB_MICRON_MT53E512M32D2NP_046_WTF = 25, // 4266Mbps. Die-F.
LPDDR4X_HOAG_4GB_MICRON_MT53E512M32D2NP_046_WTF = 26, // 4266Mbps. Die-F.
LPDDR4X_AULA_4GB_MICRON_MT53E512M32D2NP_046_WTF = 27, // 4266Mbps. Die-F.
LPDDR4X_AULA_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 28, // Die-A.
};
enum sdram_codes_mariko
{
LPDDR4X_NO_PATCH = 0,
LPDDR4X_UNUSED = 0,
// LPDDR4X_4GB_SAMSUNG_K4U6E3S4AM_MGCJ DRAM IDs: 08, 12.
// LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLHR_NME DRAM IDs: 10, 14.
LPDDR4X_4GB_SAMSUNG_X1X2 = 1, // DRAM IDs: 07.
LPDDR4X_8GB_SAMSUNG_K4UBE3D4AM_MGCJ = 2, // DRAM IDs: 09, 13.
LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTE = 3, // DRAM IDs: 11, 15.
LPDDR4X_4GB_SAMSUNG_Y = 4, // DRAM IDs: 16.
LPDDR4X_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 5, // DRAM IDs: 17, 19, 24.
LPDDR4X_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 6, // DRAM IDs: 18, 23, 28.
LPDDR4X_4GB_SAMSUNG_1Z = 7, // DRAM IDs: 20, 21, 22.
LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTF = 8, // DRAM IDs: 25, 26, 27.
LPDDR4X_4GB_HYNIX_1Y_A = 9, // DRAM IDs: 03, 05, 06.
};
void sdram_init();
void *sdram_get_params_patched();
void *sdram_get_params_t210b01();
void sdram_lp0_save_params(const void *params);
emc_mr_data_t sdram_read_mrx(emc_mr_t mrx);
#endif