mirror of
https://github.com/CTCaer/hekate.git
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125 lines
5.5 KiB
C
125 lines
5.5 KiB
C
/*
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* Copyright (c) 2018 naehrwert
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* Copyright (c) 2020-2023 CTCaer
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*
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* This program is free software; you can redistribute it and/or modify it
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* under the terms and conditions of the GNU General Public License,
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* version 2, as published by the Free Software Foundation.
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*
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* This program is distributed in the hope it will be useful, but WITHOUT
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* ANY WARRANTY; without even the implied warranty of MERCHANTABILITY or
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* FITNESS FOR A PARTICULAR PURPOSE. See the GNU General Public License for
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* more details.
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*
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* You should have received a copy of the GNU General Public License
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* along with this program. If not, see <http://www.gnu.org/licenses/>.
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*/
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#ifndef _SDRAM_H_
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#define _SDRAM_H_
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#include <mem/emc.h>
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/*
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* Tegra X1/X1+ EMC/DRAM Bandwidth Chart:
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*
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* Note: Max BWbits = Hz x ddr x bus width x channels = Hz x 2 x 32 x 2.
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* Max BWbits = Hz x ddr x bus width x channels = Hz x 2 x 64 x 1.
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* Configurations supported: 1x32, 2x32, 1x64.
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* x64 ram modules can be used by combining the 2 32-bit channels into one.
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*
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* 204.0 MHz: 3.04 <-- Tegra X1/X1+ Init/SC7 Frequency
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* 408.0 MHz: 6.08
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* 665.6 MHz: 9.92
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* 800.0 MHz: 11.92 <-- Tegra X1/X1+ Nvidia OS Boot Frequency
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* 1065.6 MHz: 15.89
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* 1331.2 MHz: 19.84
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* 1600.0 MHz: 23.84
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* 1862.4 MHz: 27.75 <-- Tegra X1 Official Max Frequency
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* 2131.2 MHz: 31.76 <-- Tegra X1+ Official Max Frequency. Not all regs have support for > 2046 MHz.
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*/
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enum sdram_ids_erista
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{
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// LPDDR4 3200Mbps.
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LPDDR4_ICOSA_4GB_SAMSUNG_K4F6E304HB_MGCH = 0,
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LPDDR4_ICOSA_4GB_HYNIX_H9HCNNNBPUMLHR_NLE = 1,
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LPDDR4_ICOSA_4GB_MICRON_MT53B512M32D2NP_062_WT = 2, // WT:C.
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LPDDR4_ICOSA_6GB_SAMSUNG_K4FHE3D4HM_MGCH = 4,
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LPDDR4_ICOSA_8GB_SAMSUNG_K4FBE3D4HM_MGXX = 7, // Custom 8GB. XX: CH/CJ/CL. 7 since it can be easily applied in fuses.
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};
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enum sdram_ids_mariko
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{
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// LPDDR4X 4266Mbps.
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LPDDR4X_HOAG_4GB_HYNIX_H9HCNNNBKMMLXR_NEE = 3, // Replaced from Copper. Die-M. (1y-01).
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LPDDR4X_AULA_4GB_HYNIX_H9HCNNNBKMMLXR_NEE = 5, // Replaced from Copper. Die-M. (1y-01).
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LPDDR4X_IOWA_4GB_HYNIX_H9HCNNNBKMMLXR_NEE = 6, // Replaced from Copper. Die-M. (1y-01).
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// LPDDR4X 3733Mbps.
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LPDDR4X_IOWA_4GB_SAMSUNG_K4U6E3S4AM_MGCJ = 8, // Die-M. 1st gen. 3733Mbps.
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LPDDR4X_IOWA_8GB_SAMSUNG_K4UBE3D4AM_MGCJ = 9, // Die-M.
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LPDDR4X_IOWA_4GB_HYNIX_H9HCNNNBKMMLHR_NME = 10, // Die-M.
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LPDDR4X_IOWA_4GB_MICRON_MT53E512M32D2NP_046_WTE = 11, // 4266Mbps. Die-E. D9WGB.
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LPDDR4X_HOAG_4GB_SAMSUNG_K4U6E3S4AM_MGCJ = 12, // Die-M. 1st gen. 3733Mbps.
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LPDDR4X_HOAG_8GB_SAMSUNG_K4UBE3D4AM_MGCJ = 13, // Die-M.
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LPDDR4X_HOAG_4GB_HYNIX_H9HCNNNBKMMLHR_NME = 14, // Die-M.
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LPDDR4X_HOAG_4GB_MICRON_MT53E512M32D2NP_046_WTE = 15, // 4266Mbps. Die-E. D9WGB.
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// LPDDR4X 4266Mbps.
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LPDDR4X_IOWA_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 17, // Die-A. (1y-X03). 2nd gen. 4266Mbps.
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LPDDR4X_IOWA_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 18, // Die-A. (1y-X03).
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LPDDR4X_HOAG_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 19, // Die-A. (1y-X03). 2nd gen. 4266Mbps.
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LPDDR4X_IOWA_4GB_SAMSUNG_K4U6E3S4AB_MGCL = 20, // Die-B. 1z nm. 40% lower power usage. (1z-01).
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LPDDR4X_HOAG_4GB_SAMSUNG_K4U6E3S4AB_MGCL = 21, // Die-B. 1z nm. 40% lower power usage. (1z-01).
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LPDDR4X_AULA_4GB_SAMSUNG_K4U6E3S4AB_MGCL = 22, // Die-B. 1z nm. 40% lower power usage. (1z-01).
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LPDDR4X_HOAG_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 23, // Die-A. (1y-X03).
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LPDDR4X_AULA_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 24, // Die-A. (1y-X03). 2nd gen. 4266Mbps.
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LPDDR4X_IOWA_4GB_MICRON_MT53E512M32D2NP_046_WTF = 25, // 4266Mbps. Die-F. D9XRR. 10nm-class (1y-01).
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LPDDR4X_HOAG_4GB_MICRON_MT53E512M32D2NP_046_WTF = 26, // 4266Mbps. Die-F. D9XRR. 10nm-class (1y-01).
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LPDDR4X_AULA_4GB_MICRON_MT53E512M32D2NP_046_WTF = 27, // 4266Mbps. Die-F. D9XRR. 10nm-class (1y-01).
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LPDDR4X_AULA_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 28, // Die-A.
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LPDDR4X_UNK0_4GB_HYNIX_H9HCNNNBKMMLXR_NEI = 29, // Die-M. 1a nm. 61% lower power usage. (1a-01).
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LPDDR4X_UNK1_4GB_HYNIX_H9HCNNNBKMMLXR_NEI = 30, // Die-M. 1a nm. 61% lower power usage. (1a-01).
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LPDDR4X_UNK2_4GB_HYNIX_H9HCNNNBKMMLXR_NEI = 31, // Die-M. 1a nm. 61% lower power usage. (1a-01).
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LPDDR4X_UNK0_4GB_MICRON_MT53E512M32D1NP_046_WTB = 32, // 1a nm. 61% lower power usage. (1a-01).
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LPDDR4X_UNK1_4GB_MICRON_MT53E512M32D1NP_046_WTB = 33, // 1a nm. 61% lower power usage. (1a-01).
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LPDDR4X_UNK2_4GB_MICRON_MT53E512M32D1NP_046_WTB = 34, // 1a nm. 61% lower power usage. (1a-01).
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};
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enum sdram_codes_mariko
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{
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LPDDR4X_NO_PATCH = 0,
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LPDDR4X_UNUSED = 0,
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// LPDDR4X_4GB_SAMSUNG_K4U6E3S4AM_MGCJ DRAM IDs: 08, 12.
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// LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLHR_NME DRAM IDs: 10, 14.
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LPDDR4X_8GB_SAMSUNG_K4UBE3D4AM_MGCJ = 1, // DRAM IDs: 09, 13.
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LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTE = 2, // DRAM IDs: 11, 15.
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LPDDR4X_4GB_SAMSUNG_K4U6E3S4AA_MGCL = 3, // DRAM IDs: 17, 19, 24.
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LPDDR4X_8GB_SAMSUNG_K4UBE3D4AA_MGCL = 4, // DRAM IDs: 18, 23, 28.
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LPDDR4X_4GB_SAMSUNG_K4U6E3S4AB_MGCL = 5, // DRAM IDs: 20, 21, 22.
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LPDDR4X_4GB_MICRON_MT53E512M32D2NP_046_WTF = 6, // DRAM IDs: 25, 26, 27.
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LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEE = 7, // DRAM IDs: 03, 05, 06.
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LPDDR4X_4GB_HYNIX_H9HCNNNBKMMLXR_NEI = 8, // DRAM IDs: 29, 30, 31.
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LPDDR4X_4GB_MICRON_MT53E512M32D1NP_046_WTB = 9, // DRAM IDs: 32, 33, 34.
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};
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void sdram_init();
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void *sdram_get_params_patched();
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void *sdram_get_params_t210b01();
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void sdram_lp0_save_params(const void *params);
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emc_mr_data_t sdram_read_mrx(emc_mr_t mrx);
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#endif
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