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hekate/bdk/mem
CTCaer 83c95d8a3b bdk: sdram: update 20/21/22 ids for new dram
Dram chip is Samsung 4GB built on 1z-nm that allows for 40% lower power usage.
2022-03-23 02:20:55 +02:00
..
emc.h
heap.c bdk: heap: improvements 2022-02-15 00:22:38 +02:00
heap.h bdk: heap: improvements 2022-02-15 00:22:38 +02:00
mc_t210.h bdk: more atf prep 2022-02-15 00:14:53 +02:00
mc.c bdk: mc: always on ahb arbitration 2022-01-29 01:29:02 +02:00
mc.h bdk: mc: always on ahb arbitration 2022-01-29 01:29:02 +02:00
minerva.c bdk: update l4t hekatf prep functions 2022-03-23 00:58:20 +02:00
minerva.h bdk: update l4t hekatf prep functions 2022-03-23 00:58:20 +02:00
mtc_table.h
sdram_config_t210b01.inl bdk: sdram: update 20/21/22 ids for new dram 2022-03-23 02:20:55 +02:00
sdram_config.inl
sdram_lp0_param_t210.h
sdram_lp0_param_t210b01.h
sdram_lp0.c
sdram_param_t210.h
sdram_param_t210b01.h
sdram.c bdk: sdram: update 20/21/22 ids for new dram 2022-03-23 02:20:55 +02:00
sdram.h bdk: sdram: update 20/21/22 ids for new dram 2022-03-23 02:20:55 +02:00
smmu.c
smmu.h bdk: various functionality independent changes 2022-01-16 01:03:24 +02:00