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bdk: dram: correct old comments

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CTCaer 2023-07-21 18:39:46 +03:00
parent 6e954f5cdf
commit b9bc35a22e
2 changed files with 8 additions and 8 deletions
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12
bdk/mem/sdram_config.inl
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@ -489,8 +489,8 @@ static const sdram_params_t210_t _dram_cfg_0_samsung_4gb = {
/* DRAM size information */ /* DRAM size information */
.mc_emem_adr_cfg = 0x00000001, // 2 Ranks. .mc_emem_adr_cfg = 0x00000001, // 2 Ranks.
.mc_emem_adr_cfg_dev0 = 0x00070302, // Rank 0 Density 512MB. .mc_emem_adr_cfg_dev0 = 0x00070302, // Chip 0 Density 512MB.
.mc_emem_adr_cfg_dev1 = 0x00070302, // Rank 1 Density 512MB. .mc_emem_adr_cfg_dev1 = 0x00070302, // Chip 1 Density 512MB.
.mc_emem_adr_cfg_channel_mask = 0xFFFF2400, .mc_emem_adr_cfg_channel_mask = 0xFFFF2400,
.mc_emem_adr_cfg_bank_mask0 = 0x6E574400, .mc_emem_adr_cfg_bank_mask0 = 0x6E574400,
.mc_emem_adr_cfg_bank_mask1 = 0x39722800, .mc_emem_adr_cfg_bank_mask1 = 0x39722800,
@ -655,8 +655,8 @@ static const sdram_vendor_patch_t sdram_cfg_vendor_patches_t210[] = {
{ 0x00000005, 0x5C0 / 4, DRAM_ID(1) }, // mc_emem_arb_timing_r2w. { 0x00000005, 0x5C0 / 4, DRAM_ID(1) }, // mc_emem_arb_timing_r2w.
// Samsung 6GB density config. // Samsung 6GB density config.
{ 0x000C0302, 0x56C / 4, DRAM_ID(4) }, // mc_emem_adr_cfg_dev0. 768MB Rank 0 density. { 0x000C0302, 0x56C / 4, DRAM_ID(4) }, // mc_emem_adr_cfg_dev0. 768MB Chip 0 density.
{ 0x000C0302, 0x570 / 4, DRAM_ID(4) }, // mc_emem_adr_cfg_dev1. 768MB Rank 1 density. { 0x000C0302, 0x570 / 4, DRAM_ID(4) }, // mc_emem_adr_cfg_dev1. 768MB Chip 1 density.
{ 0x00001800, 0x584 / 4, DRAM_ID(4) }, // mc_emem_cfg. 6GB total density. { 0x00001800, 0x584 / 4, DRAM_ID(4) }, // mc_emem_cfg. 6GB total density.
// Samsung 8GB density config. // Samsung 8GB density config.
@ -665,7 +665,7 @@ static const sdram_vendor_patch_t sdram_cfg_vendor_patches_t210[] = {
{ 0x0000003B, 0x1C0 / 4, DRAM_ID(7) }, // emc_txsr. { 0x0000003B, 0x1C0 / 4, DRAM_ID(7) }, // emc_txsr.
{ 0x0000003B, 0x1C4 / 4, DRAM_ID(7) }, // emc_txsr_dll. { 0x0000003B, 0x1C4 / 4, DRAM_ID(7) }, // emc_txsr_dll.
{ 0x00000713, 0x2B4 / 4, DRAM_ID(7) }, // emc_dyn_self_ref_control. { 0x00000713, 0x2B4 / 4, DRAM_ID(7) }, // emc_dyn_self_ref_control.
{ 0x00080302, 0x56C / 4, DRAM_ID(7) }, // mc_emem_adr_cfg_dev0. 1024MB Rank 0 density. { 0x00080302, 0x56C / 4, DRAM_ID(7) }, // mc_emem_adr_cfg_dev0. 1024MB Chip 0 density.
{ 0x00080302, 0x570 / 4, DRAM_ID(7) }, // mc_emem_adr_cfg_dev1. 1024MB Rank 1 density. { 0x00080302, 0x570 / 4, DRAM_ID(7) }, // mc_emem_adr_cfg_dev1. 1024MB Chip 1 density.
{ 0x00002000, 0x584 / 4, DRAM_ID(7) }, // mc_emem_cfg. 8GB total density. { 0x00002000, 0x584 / 4, DRAM_ID(7) }, // mc_emem_cfg. 8GB total density.
}; };

4
bdk/mem/sdram_config_t210b01.inl
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@ -542,8 +542,8 @@ static const sdram_params_t210b01_t _dram_cfg_08_10_12_14_samsung_hynix_4gb = {
/* DRAM size information */ /* DRAM size information */
.mc_emem_adr_cfg = 0x00000000, // 1 Rank. .mc_emem_adr_cfg = 0x00000000, // 1 Rank.
.mc_emem_adr_cfg_dev0 = 0x00080302, // Rank 0 Density 1024MB. .mc_emem_adr_cfg_dev0 = 0x00080302, // Chip 0 Density 1024MB.
.mc_emem_adr_cfg_dev1 = 0x00080302, // Rank 1 Density 1024MB. .mc_emem_adr_cfg_dev1 = 0x00080302, // Chip 1 Density 1024MB.
.mc_emem_adr_cfg_channel_mask = 0xFFFF2400, .mc_emem_adr_cfg_channel_mask = 0xFFFF2400,
.mc_emem_adr_cfg_bank_mask0 = 0x6E574400, .mc_emem_adr_cfg_bank_mask0 = 0x6E574400,
.mc_emem_adr_cfg_bank_mask1 = 0x39722800, .mc_emem_adr_cfg_bank_mask1 = 0x39722800,